Adopted member (2024-2025)
Group A01 Members
A01 Data-driven search for 2.5D moiré superlattices and extraction of dominant factors of physical properties |
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A01 Establish of science of Janus atomic layers via atomic layer functionalization |
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A01 Creation and Exploration of Photophysical Properties in 2.5-Dimensional Materials Induced by Single Molecules |
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A01 Creation of New 2D Materials Produced by 3D Layered Crystals |
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A01 Control of molecular arrangement on two-dimensional materials by transferring 2.5-dimensional bumpy nanospaces |
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A01 Exploitation of physical properties of high entropy transition metal dichalcogenides |
Group A02 Members
A02 Functional property exploration by stacking and integrating nanosheet crystals with different material dimensionality |
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A02 Synthesis and electronic properties elucidation of 2.5-dimensional TMDs intercalated compounds utilizing nano-space |
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A02 Structural control of 2.5-dimensional materials consisting of two-dimensional materials and perovskite nanostructures and exploration of their optoelectronic functions |
Group A03 Members
A03 Exploring the Nanoscale Optical Properties of 2.5-Dimensional Materials with Ultrafast, Ultra-Broadband Near-Field Microspectroscopy |
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A03 Molecular Arrangement in Monatomic Layer Materials Using Scanning Probe Microscopy |
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A03 Electrochemical Imaging of Catalytic Active Sites on 2.5-Dimensional Materials |
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A03 Correlation among interface structure, thermal and electrical transports across van der Waals structures |
Group A04 Members
A04 Development of novel high-frequency electromagnetic responses in quantum phases of 2.5 dimensional materials |
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A04 Observation of efficient spin-charge conversion in 2.5D materials |
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A04 Dynamic Interface Engineering of Atomic Layer Two-Dimensional Materials by Ultrafast Optical Measurement |
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A04 Exploring gate-tunable magnetism via intercalation technique |
Group A05 Members
A05 Computational analysis and design of carrier transport and fabrication process in two dimensional space |
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A05 Realization of two-dimensional semiconductor FETs with strongly-correlated gates |