研究成果

謝辞の記載についてAcknowledgement remarks

雑誌論文Papers

1. R. C. -Vitoria, T. Hotta, Y. Tanuma, I. K. Sideri, N. Tagmatarchis, C. Ewels, R. Kitaura
   Localized Excitons in Zn-Porphyrin Covalently Functionalized MoS₂ and WS₂
   J. Phys. Chem. C , 127 , 10699-10708 (2023)
   DOI: 10.1021/acs.jpcc.2c08009
      
2. F. Zhang, R. Tamura, F. Zeng, D. Kozawa, R. Kitaura
   Bayesian Optimization for Controlled Chemical Vapor Deposition Growth of WS₂
   ACS Appl. Mater. Int. , 16 , 59109-59115 (2024)
   DOI: 10.1021/acsami.4c15275
          
3. F. Zhang, F. Zeng, D. Kozawa, R. Kitaura
   Simulation-Based Investigation of Curtain Gas Effect on Metal-Organic Chemical Vapor Deposition Growth of Two-Dimensional Transition Metal Dichalcogenides
   Crys. Grow. Des. , 24 , 6001-6006 (2024)
   DOI: 10.1021/acs.cgd.4c00477
          
4. I. Tanaka, M. Wei, T. Nishimura, K. Kanahashi, S. Morito, K. Ueno, A. Azizi, K. Nagashio
   Quantitative ToF-SIMS Assessment of In-Plane and Out-of-Plane Nb Doping Uniformity in CVT-Grown MoS₂ Crystals
   Small Methods , 9 , e01405 (2025)
   DOI: 10.1002/smtd.202501405
          
5. S. Tahara, K. Ueno, K. Kamiya, T. Sakai, R. Nouchi
   Patterning of layered semiconductor GeS₂ by laser photooxidation and water immersion
   Nanoscale , 17 , 25877-25883 (2025)
   DOI: 10.1039/D5NR01130B
      
6. R. Nakajima, T. Nishimura, K. Kanahashi, S. Hatayama, W.H. Chang, Y. Saito, T. Irisawa, K. Ueno, Y. Miyata, T. Taniguchi, K. Watanabe, K. Nagashio
   Structural and Electric Characterization of Sputtered Pt/WSe₂ Contacts toward High-Performance 2D p-FETs
   ACS Omega , 10 , 42973-42979 (2025)
   DOI: 10.1021/acsomega.5c05764
                  
7. T. Ono, T. Shigeno, Y. Yasui, M. Fukuda, T. Ozaki, K. Ueno, Y. Sugimoto
   Frequency-modulation atomic force microscopy observation of 1T-TaS₂ in the nearly commensurate charge density wave phase
   Appl. Phys. Lett. , 126 , 263102 (2025)
   DOI: 10.1063/5.0273456
            
8. K. Kanahashi, I. Tanaka, T. Nishimura, K. Aso, A. K. A. Lu, S. Morito, L. Chen, T. Kakeya, S. Watanabe, Y. Oshima, Y. Yamada-Takamura, K. Ueno, A. Azizi, K. Nagashio
   Dimensionality-Induced Transition from Degenerate to Nondegenerate States in Nb-Doped WSe₂
   ACS Nano , 19 , 10244–10254 (2025)
   DOI: 10.1021/acsnano.4c17660
              
9. K. Nakayama, S. Toida, T. Endo, M. Inada, S. Sato, H. Tani, K. Watanabe, T. Taniguchi, K. Ueno, Y. Miyata, K. Matsuda, M. Yamamoto
   Spatial and reconfigurable control of photoluminescence from single-layer MoS₂ using a strained VO₂-based Fabry–Pérot cavity
   Appl. Phys. Lett. , 125 , 223106 (2024)
   DOI: 10.1063/5.0236517
              
10. K. Nakayama, S. Toida, T. Endo, M. Inada, S. Sato, H. Tani, K. Watanabe, T. Taniguchi, K. Ueno, Y. Miyata, K. Matsuda, M. Yamamoto
    Spatial and reconfigurable control of photoluminescence from single-layer MoS₂ using a strained VO₂-based Fabry–Pérot cavity
    Appl. Phys. Lett. , 125 , 223106 (2024)
    DOI: 10.1063/5.0236517
                         
11. M.-P. Lee, C. Gao, M.-Y. Tsai, C.-Y. Lin, F.-S. Yang, H.-Y. Sung, C. Zhang, W. Li, J. Li, J. Zhang, K. Watanabe, T. Taniguchi, K. Ueno, K. Tsukagoshi, C.-H. Ho, J. Chu, P.-W. Chiu, M. Li, W.-W. Wu, Y.-F. Lin
    Silicon-van der Waals heterointegration for CMOS-compatible logic-in-memory design
    Sci. Adv. , 9 , 49 (2023)
    DOI: 10.1126/sciadv.adk1597
           
12. T. Fukui, T. Nishimura, Y. Miyata, K. Ueno, T. Taniguchi, K. Watanabe, K. Nagashio
    Single-gate MoS₂ Tunnel FET with a Thickness-Modulated Homojunction
    ACS Appl. Mater. Interfaces , ACS Appl. Mater.Interfaces , 8993-9001 (2024)
    DOI: 10.1021/acsami.3c15535
                   
13. R. Nakajima, T. Nishimura, K. Ueno, K. Nagashio
    Work function modulation of Bi/Au bilayer system toward p-type WSe₂ FET
    ACS Appl. Electron. Mater. , 6 , 144-149 (2023)
    DOI: 10.1021/acsaelm.3c01091
           
14. R. Kato, H. Uchiyama, T. Nishimura, K. Ueno, T. Taniguchi, K. Watanabe, E. Chen, K. Nagashio
    p-type conversion of WS₂ and WS₂ by position-selective oxidation doping and its application in top gate transistors
    ACS Appl. Mater. Interfaces , 15 , 26977-26984 (2023)
    DOI: 10.1021/acsami.3c04052
               
15. M. Xue, K. Watanabe, T. Taniguchi, R. Kitaura
    Gate-modulated reflectance spectroscopy for detecting excitonic states in two-dimensional semiconductors
    Appl. Phys. Lett. , 123 , 063101 (2023)
    DOI: 10.1063/5.0159245
           
16. Y. Urano, M. Xue, K. Watanabe, T. Taniguchi, R. Kitaura
    Assessment of valley coherence in a high-quality monolayer molybdenum diselenide
    APEX , 16 , 065003 (2023)
    DOI: 10.35848/1882-0786/acd985
           
17. J. Choi, J. Embley, D. D. Blach, R. Perea-Causín, D. Erkensten, D. S. Kim, L. Yuan, W. Y. Yoon, T. Taniguchi, K. Watanabe, K. Ueno, E. Tutuc, S. Brem, E. Malic, X. Li, L. Huang
    Fermi Pressure and Coulomb Repulsion Driven Rapid Hot Plasma Expansion in a van der Waals Heterostructure
    Nano Lett. , 23 , 4399-4405 (2023)
    DOI: 10.1021/acs.nanolett.3c00678
           
18. M. Maruyama, N. Ichinose, Y. Gao, Z. Liu, R. Kitaura, S. Okada
    Gate-Induced Trans-Dimensionality of Carrier Distribution in Bilayer Lateral Heterosheet of MoS2 and WS2 for Semiconductor Devices with Tunable Functionality
    ACS Appl. Nano Mater. , 6 , 5434-5439 (2023)
    DOI: 10.1021/acsanm.2c05561
           
19. S.Genchi, S.Nakaharai, T.Iwasaki, K.Watanabe, T. Taniguchi, Y. Wakayama, A.N.Hattori, H. Tanaka
    Step electrical switching in VO₂ on hexagonal boron nitride using confined individual metallic domains
    Jpn. J. Appl. Phys. , 62 , SG1008 (2023)
    DOI: 10.35848/1347-4065/acb65b
           
20. T. Hotta, H. Nakajima, S. Chiashi, T. Inoue, S. Maruyama, K. Watanabe, T. Taniguchi, R. Kitaura
    Trion confinement in monolayer MoSe₂ by carbon nanotube local gating
    Appl. Phys. Exp. , 16 , 015001 (2022)
    DOI: 10.35848/1882-0786/aca642
           
21. R. Canton-Vitoria, K. Sato, Y. Motooka, S. Toyokuni, Z. Liu, R. Kitaura
    Field-effect transistor antigen/antibody-TMDs sensors for the detection of COVID-19 samples
    Nanoscale , 15 , 4570 (2023)
    DOI: 10.1039/D2NR06630K
       
22. R. Canton-Vitoria, T. Hotta, M. Xue, S. Zhang, R. Kitaura
    Synthesis and Characterization of Transition Metal Dichalcogenide Nanoribbons Based on a Controllable O2 Etching
    JACS Au , 3, 3 , 775 (2023)
    DOI: 10.1021/jacsau.2c00536
       
23. S. Zhang, M. Xue, F. Zeng, R. Kitaura
    An observation of a photovoltaic effect in MoS2 nanoribbons fabricated with a top-down approach
    Appl. Phys. Exp. , 16 , 035003 (2023)
    DOI: 10.35848/1882-0786/acbf9f
       
24. H. Ogura, S. Kawasaki, Z. Liu, T. Endo, M. Maruyama, Y. Gao, Y. Nakanishi, H. E. Lim, K. Yanagi, T. Irisawa, K. Ueno, S. Okada, K. Nagashio, Y. Miyata
    Multilayer In-Plane Heterostructures Based on Transition Metal Dichalcogenides for Advanced Electronics
    ACS Nano , 17,7 , 6545-6554 (2023)
    DOI: 10.1021/acsnano.2c11927
                       
25. S. Zhang, M. Maruyama, S. Okada, M. Xue, K. Watanabe, T. Taniguchi, K. Hashimoto, Y. Miyata, R. C.-Vitoria, R. Kitaura
    Observation of the photovoltaic effect in a van der Waals heterostructure
    Nanoscale , 15 , 5948-5953 (2023)
    DOI: 10.1039/D2NR06616E
                 
26. Y. Gao, H. Nakajima, M. Maruyama, T. Taniguchi, K. Watanabe, R. Kitaura, S. Okada
    Formation of a one-dimensional hole channel in MoS₂ by structural corrugation
    Jpn. J. Appl. Phys. , 62 , 015001 (2023)
    DOI: 10.35848/1347-4065/acaae0
             
27. W. Nishiyama, T. Nishimura, M. Nishioka, K. Ueno, S. Iwamoto, K. Nagashio
    Is the Band Gap of Bulk PdSe₂ Located Truly in the Far Infrared Region? -Determination by Fourier Transform Photocurrent Spectroscopy
    Adv. Photonics Res. , 2022 , 2200231 (2022)
    DOI: 10.1002/adpr.202200231
           

書籍Books

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学会発表Presentations, Lectures

1. Hidekazu Tanaka
   New memory technologies using phase change oxides
   11th imec Handai International Symposium, ( 2022 , 12 )
      
2. Hidekazu Tanaka
   Nano/micro-scale phase change electronics using functional oxides/2D material heterostructures
   35th International Microprocesses and Nanotechnology Conference (MNC 2022), ( 2022 , 11 )