研究成果

謝辞の記載についてAcknowledgement remarks

雑誌論文Papers

1. K. Nakayama, S. Toida, T. Endo, M. Inada, S. Sato, H. Tani, K. Watanabe, T. Taniguchi, K. Ueno, Y. Miyata, K. Matsuda, M. Yamamoto
   Spatial and reconfigurable control of photoluminescence from single-layer MoS₂ using a strained VO₂-based Fabry–Pérot cavity
   Appl. Phys. Lett. , 125 , 223106 (2024)
   DOI: 10.1063/5.0236517
                        
2. M.-P. Lee, C. Gao, M.-Y. Tsai, C.-Y. Lin, F.-S. Yang, H.-Y. Sung, C. Zhang, W. Li, J. Li, J. Zhang, K. Watanabe, T. Taniguchi, K. Ueno, K. Tsukagoshi, C.-H. Ho, J. Chu, P.-W. Chiu, M. Li, W.-W. Wu, Y.-F. Lin
   Silicon-van der Waals heterointegration for CMOS-compatible logic-in-memory design
   Sci. Adv. , 9 , 49 (2023)
   DOI: 10.1126/sciadv.adk1597
          
3. T. Fukui, T. Nishimura, Y. Miyata, K. Ueno, T. Taniguchi, K. Watanabe, K. Nagashio
   Single-gate MoS₂ Tunnel FET with a Thickness-Modulated Homojunction
   ACS Appl. Mater. Interfaces , ACS Appl. Mater.Interfaces , 8993-9001 (2024)
   DOI: 10.1021/acsami.3c15535
                  
4. R. Nakajima, T. Nishimura, K. Ueno, K. Nagashio
   Work function modulation of Bi/Au bilayer system toward p-type WSe₂ FET
   ACS Appl. Electron. Mater. , 6 , 144-149 (2023)
   DOI: 10.1021/acsaelm.3c01091
          
5. R. Kato, H. Uchiyama, T. Nishimura, K. Ueno, T. Taniguchi, K. Watanabe, E. Chen, K. Nagashio
   p-type conversion of WS₂ and WS₂ by position-selective oxidation doping and its application in top gate transistors
   ACS Appl. Mater. Interfaces , 15 , 26977-26984 (2023)
   DOI: 10.1021/acsami.3c04052
              
6. M. Xue, K. Watanabe, T. Taniguchi, R. Kitaura
   Gate-modulated reflectance spectroscopy for detecting excitonic states in two-dimensional semiconductors
   Appl. Phys. Lett. , 123 , 063101 (2023)
   DOI: 10.1063/5.0159245
          
7. Y. Urano, M. Xue, K. Watanabe, T. Taniguchi, R. Kitaura
   Assessment of valley coherence in a high-quality monolayer molybdenum diselenide
   APEX , 16 , 065003 (2023)
   DOI: 10.35848/1882-0786/acd985
          
8. J. Choi, J. Embley, D. D. Blach, R. Perea-Causín, D. Erkensten, D. S. Kim, L. Yuan, W. Y. Yoon, T. Taniguchi, K. Watanabe, K. Ueno, E. Tutuc, S. Brem, E. Malic, X. Li, L. Huang
   Fermi Pressure and Coulomb Repulsion Driven Rapid Hot Plasma Expansion in a van der Waals Heterostructure
   Nano Lett. , 23 , 4399-4405 (2023)
   DOI: 10.1021/acs.nanolett.3c00678
          
9. M. Maruyama, N. Ichinose, Y. Gao, Z. Liu, R. Kitaura, S. Okada
   Gate-Induced Trans-Dimensionality of Carrier Distribution in Bilayer Lateral Heterosheet of MoS2 and WS2 for Semiconductor Devices with Tunable Functionality
   ACS Appl. Nano Mater. , 6 , 5434-5439 (2023)
   DOI: 10.1021/acsanm.2c05561
          
10. S.Genchi, S.Nakaharai, T.Iwasaki, K.Watanabe, T. Taniguchi, Y. Wakayama, A.N.Hattori, H. Tanaka
    Step electrical switching in VO₂ on hexagonal boron nitride using confined individual metallic domains
    Jpn. J. Appl. Phys. , 62 , SG1008 (2023)
    DOI: 10.35848/1347-4065/acb65b
           
11. T. Hotta, H. Nakajima, S. Chiashi, T. Inoue, S. Maruyama, K. Watanabe, T. Taniguchi, R. Kitaura
    Trion confinement in monolayer MoSe₂ by carbon nanotube local gating
    Appl. Phys. Exp. , 16 , 015001 (2022)
    DOI: 10.35848/1882-0786/aca642
           
12. R. Canton-Vitoria, K. Sato, Y. Motooka, S. Toyokuni, Z. Liu, R. Kitaura
    Field-effect transistor antigen/antibody-TMDs sensors for the detection of COVID-19 samples
    Nanoscale , 15 , 4570 (2023)
    DOI: 10.1039/D2NR06630K
       
13. R. Canton-Vitoria, T. Hotta, M. Xue, S. Zhang, R. Kitaura
    Synthesis and Characterization of Transition Metal Dichalcogenide Nanoribbons Based on a Controllable O2 Etching
    JACS Au , 3, 3 , 775 (2023)
    DOI: 10.1021/jacsau.2c00536
       
14. S. Zhang, M. Xue, F. Zeng, R. Kitaura
    An observation of a photovoltaic effect in MoS2 nanoribbons fabricated with a top-down approach
    Appl. Phys. Exp. , 16 , 035003 (2023)
    DOI: 10.35848/1882-0786/acbf9f
       
15. H. Ogura, S. Kawasaki, Z. Liu, T. Endo, M. Maruyama, Y. Gao, Y. Nakanishi, H. E. Lim, K. Yanagi, T. Irisawa, K. Ueno, S. Okada, K. Nagashio, Y. Miyata
    Multilayer In-Plane Heterostructures Based on Transition Metal Dichalcogenides for Advanced Electronics
    ACS Nano , 17,7 , 6545-6554 (2023)
    DOI: 10.1021/acsnano.2c11927
                       
16. S. Zhang, M. Maruyama, S. Okada, M. Xue, K. Watanabe, T. Taniguchi, K. Hashimoto, Y. Miyata, R. C.-Vitoria, R. Kitaura
    Observation of the photovoltaic effect in a van der Waals heterostructure
    Nanoscale , 15 , 5948-5953 (2023)
    DOI: 10.1039/D2NR06616E
                 
17. Y. Gao, H. Nakajima, M. Maruyama, T. Taniguchi, K. Watanabe, R. Kitaura, S. Okada
    Formation of a one-dimensional hole channel in MoS₂ by structural corrugation
    Jpn. J. Appl. Phys. , 62 , 015001 (2023)
    DOI: 10.35848/1347-4065/acaae0
             
18. W. Nishiyama, T. Nishimura, M. Nishioka, K. Ueno, S. Iwamoto, K. Nagashio
    Is the Band Gap of Bulk PdSe₂ Located Truly in the Far Infrared Region? -Determination by Fourier Transform Photocurrent Spectroscopy
    Adv. Photonics Res. , 2022 , 2200231 (2022)
    DOI: 10.1002/adpr.202200231
           

書籍Books

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学会発表Presentations, Lectures

1. Hidekazu Tanaka
   New memory technologies using phase change oxides
   11th imec Handai International Symposium, ( 2022 , 12 )
      
2. Hidekazu Tanaka
   Nano/micro-scale phase change electronics using functional oxides/2D material heterostructures
   35th International Microprocesses and Nanotechnology Conference (MNC 2022), ( 2022 , 11 )