研究成果
Results list研究成果一覧
謝辞の記載についてAcknowledgement remarks
雑誌論文Papers
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S. Toida, S. Yamaguchi, T. Endo, Y. Nakanishi, K. Watanabe, T. Taniguchi, K. Nagashio, Y. Miyata
Transport properties of multilayer NbxMo₁−xS₂/MoS₂ in-plane heterostructure tunnel FETs on hexagonal boron nitride substrate
Appl. Phys. lett , 124 , 263101 (2024)
DOI: 10.1063/5.0209432
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Ryo Nanae, Satsuki Kitamura, Yih-Ren Chang, Kaito Kanahashi, Tomonori Nishimura, Redhwan Moqbel, Kung-Hsuan Lin, Mina Maruyama, Yanlin Gao, Susumu Okada, Kai Qi, Jui-Han Fu, Vincent Tung, Takashi Taniguchi, Kenji Watanabe, Kosuke Nagashio
Bulk Photovoltaic Effect in Single Ferroelectric Domain of SnS Crystal and Control of Local Polarization by Strain
Adv. Funct. Mater , 2406 , 140 (2024)
DOI: 10.1002/adfm.202406140
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R. Moqbel, R. Nanae, S. Kitamura, M.-H. Lee, Y.-W. Lan, C.-C. Lee, K. Nagashio, K.H. Lin
Giant Second-order Nonlinearity and Anisotropy of Large-sized Few-layer SnS with Ferroelectric Stacking
Adv. Optical Mater. , 2400 , 355 (2024)
DOI: 10.1002/adom.202400355
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N. Fang, Y. R. Chang, S. Fujii, D. Yamashita, M. Maruyama, Y. Gao, C. F. Fong, D. Kozawa, K. Otsuka, K. Nagashio, S. Okada, Y. K. Kato
Room-temperature quantum emission from interface excitons in mixed-dimensional heterostructures
Nature commun , 15 , 2871 (2024)
DOI: 10.48550/arXiv.2307.15399
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N. Fang, Y. R. Chang, D. Yamashita, S. Fujii, M. Maruyama, Y. Gao, C. F. Fong, K. Otsuka, K. Nagashio, S. Okada, Y. K. Kato
Resonant exciton transfer in mixed-dimensional heterostructures for overcoming dimensional restrictions in optical processes
Nature Commun , 14 , 8152 (2023)
DOI: 10.1038/s41467-023-43928-2
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Y-R. Chang, R. Nanae, S. Kitamura, T. Nishimura, H. Wang, Y. Xiang, K. Shinokita, K. Matsuda, T. Taniguchi, K. Watanabe, K. Nagashio
Shift current photovoltaics based on a non-centrosymmetric phase in in-plane ferroelectric SnS
Adv. Mater. , 35 , 2301172 (2023)
DOI: 10.1002/adma.202301172
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S. Ngamprapawat, J. Kawase, T. Nishimura, K. Watanabe, T. Taniguchi, K. Nagashio
From h-BN to graphene: characterizations of hybrid carbon-doped h-BN for applications in electronic and optoelectronic devices
Adv. Electronic Mater. , 9 , 2300083 (2023)
DOI: 10.1002/aelm.202300083
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T. Fukui, T. Nishimura, Y. Miyata, K. Ueno, T. Taniguchi, K. Watanabe, K. Nagashio
Single-gate MoS₂ Tunnel FET with a Thickness-Modulated Homojunction
ACS Appl. Mater. Interfaces , ACS Appl. Mater.Interfaces , 8993-9001 (2024)
DOI: 10.1021/acsami.3c15535
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R. Nakajima, T. Nishimura, K. Ueno, K. Nagashio
Work function modulation of Bi/Au bilayer system toward p-type WSe₂ FET
ACS Appl. Electron. Mater. , 6 , 144-149 (2023)
DOI: 10.1021/acsaelm.3c01091
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R. Kato, H. Uchiyama, T. Nishimura, K. Ueno, T. Taniguchi, K. Watanabe, E. Chen, K. Nagashio
p-type conversion of WS₂ and WS₂ by position-selective oxidation doping and its application in top gate transistors
ACS Appl. Mater. Interfaces , 15 , 26977-26984 (2023)
DOI: 10.1021/acsami.3c04052
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H. Ogura, S. Kawasaki, Z. Liu, T. Endo, M. Maruyama, Y. Gao, Y. Nakanishi, H. E. Lim, K. Yanagi, T. Irisawa, K. Ueno, S. Okada, K. Nagashio, Y. Miyata
Multilayer In-Plane Heterostructures Based on Transition Metal Dichalcogenides for Advanced Electronics
ACS Nano , 17,7 , 6545-6554 (2023)
DOI: 10.1021/acsnano.2c11927
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R. Moqbel, Y.-R. Chang, Z. -Y. Li, S. -H. Kung, H. -Y. Cheng, C. -C. Lee, K. Nagashio, K. -H. Lin
Wavelength Dependence of Polarization-resolved Second Harmonic Generation from Ferroelectric SnS Few Layers
2D mater. , 10 , 999 , 15022 (2022)
DOI: 10.1088/2053-1583/acab74
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S. Li, T. Nishimura, M. Maruyama, S. Okada, K. Nagashio
Experimental verification of SO₂ and S desorption contributing to defect formation in MoS₂ by thermal desorption spectroscopy
Nanoscale Adv. , 5 , 405-411 (2023)
DOI: 10.1039/D2NA00636G
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H. Uchiyama, K. Maruyama, E. Chen, T. Nishimura, K. Nagashio
"A Monolayer MoS2 FET with an EOT of 1.1 nm Achieved by the Direct Formation of a High-κ Er2O3 Insulator Through Thermal Evaporation",
Small , 1002 , 2207394 (2023)
DOI: 10.1002/smll.202207394
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N. Fang, D. Yamashita, S. Fujii, K. Otsuka, T. Taniguchi, K. Watanabe, K. Nagashio, Y. K. Kato
Quantization of Mode Shifts in Nanocavities Integrated with Atomically Thin Sheets
Adv. Opt. Mater. , 10 , 2200538 (2022)
DOI: 10.1002/adom.202200538
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T. Sasaki, K. Ueno, T. Taniguchi, K. Watanabe, T. Nishimura, K. Nagashio
Ultrafast Operation of 2D Heterostructured Nonvolatile Memory Devices Provided by the Strong Short-Time Dielectric Breakdown Strength of h-BN
ACS Appl. Mater. Interfaces. , 14, 22 , 25659–25669 (2022)
DOI: 10.1021/acsami.2c03198
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W. Nishiyama, T. Nishimura, M. Nishioka, K. Ueno, S. Iwamoto, K. Nagashio
Is the Band Gap of Bulk PdSe₂ Located Truly in the Far Infrared Region? -Determination by Fourier Transform Photocurrent Spectroscopy
Adv. Photonics Res. , 2022 , 2200231 (2022)
DOI: 10.1002/adpr.202200231
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S. Ngamprapawat, T. Nishimura, K. Watanabe, T. Taniguchi, K. Nagashio
Current Injection into Single-Crystalline Carbon-Doped h-BN toward Electronic and Optoelectronic Applications
ACS Appl. Mater. Interfaces , 14,22 , 25731-25740 (2022)
DOI: 10.1021/acsami.2c04544
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Y. Chang, T. Nishimura, T. Taniguchi, K. Watanabe,K. Nagashio
Performance enhancement of SnS/h-BN Heterostructure p-type FET via Thermodynamically Predicted Surface Oxide Conversion Method
ACS Appl. Mater. Interfaces. , 14, 17 , 19928–19937 (2022)
DOI: 10.1021/acsami.2c05534
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W. Nishiyama, T. Nishimura, K. Ueno, T. Taniguchi, K. Watanabe, K. Nagashio
Quantitative Determination of Contradictory Band Gap Values of Bulk PdSe2 from Electrical Transport Properties
Adv. Funct. Mater. , 32 , 2108061 (2021)
DOI: 10.1002/adfm.202108061
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M. Umeda, N. Higashitarumizu, R. Kitaura, T. Nishimura, K. Nagashio
Identification of the position of piezoelectric polarization at the MoS2/metal interface
Appl. Phys. Express , 14 , 125002 (2021)
DOI: 10.35848/1882-0786/ac3d1f
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H. Ago, S. Okada, Y. Miyata, K. Matsuda, M. Koshino, K. Ueno, K. Nagashio
Science of 2.5 dimensional materials: paradigm shift of materials science toward future social innovation
Sci. Tech. Adv. Mater. , 23 , 275-299 (2022)
DOI: 10.1080/14686996.2022.2062576
プレスリリース: https://www.asiaresearchnews.com/content/new-age-25d-materials
書籍Books
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宮田耕充、吾郷浩樹、松田一成、長汐晃輔
遷移金属ダイカルコゲナイドの基礎と最新動向
株式会社シーエムシー出版 (2023)
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長汐晃輔
固体物理
株式会社 アグネ技術センター page: 605-612 (2023)
学会発表Presentations, Lectures
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長汐晃輔
2次元材料のウエハスケール集積回路技術の基盤構築に向けて
2024年第85回応用物理学会秋季学術講演会, ( 2024 , 9 )
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長汐晃輔
Shift current photovoltaics in single domain ferroelectric SnS
SAP-Optica Joint Symposia, 2024年第85回応用物理学会秋季学術講演会, ( 2024 , 9 )
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Kosuke Nagashio
2D layered semiconductor FETs for future electronics
Intel-UTokyo Joint Symposium,, ( 2024 , 12 )
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Kosuke Nagashio
2D layered semiconductor FETs for future electronics
Bilateral Workshop on Low-dimensional Semiconductors, ( 2024 , 12 )
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Kosuke Nagashio
2D layered semiconductor FETs : Challenge & Perspective
International Czech-Japanese Symposium on Advanced Multiscale Materials for Key Enabling Technologies, ( 2024 , 9 )
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Kosuke Nagashio
2D layered semiconductor FETs: P type operation & large-scale device characterization
International UK-Japan Symposium on 2D Materials, ( 2024 , 9 )
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Kosuke Nagashio
2D layered semiconductor FETs : Challenge & Perspective
International Conference on Solid State Devices and Materials (SSDM), ( 2024 , 9 )
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Kosuke Nagashio
2D layered semiconductor FETs: P type operation & large-scale device characterization
2024 Advanced Epitaxy for Freestanding Membranes and 2D Materials (AEFM), ( 2024 , 7 )
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長汐晃輔
2次元層状強誘電SnSにおけるバルク光起電力効果
Physics and Applications of Spin-related Phenomena in Semiconductors (PASPS-27), ( 2024 , 3 )
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Kosuke Nagashio
Device Technology for 2D Layered Semiconductor FETs: Challenge & Perspective
2023 Symposia on VLSI Technology and Circuits, ( 2024 , 6 )
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長汐晃輔
2次元層状材料トランジスタの発表から約10年 ー課題と将来展望ー
日本学術振興会 R031 ハイブリッド量子ナノ技術委員会第14回研究会, ( 2024 , 1 )
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Kosuke Nagashio
Shift current photovoltaics in ferroelectric SnS
JAIST International symposium on Nano-Materials for Novel Devices, ( 2024 , 1 )
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長汐晃輔
Shift current photovoltaics in ferroelectric SnS
International Conference on Materials and Systems for Sustainability 2023(ICMaSS), ( 2023 , 12 )
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Kosuke Nagashio
2D layered semiconductors: Challenge & Perspective
36th International Microprocesses and Nanotechnology Conference (MNC), ( 2023 , 11 )
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Kosuke Nagashio
Inversion Symmetry Broken Bulk SnS Formed by Step-edge-induced Spiral Growth for Energy Harvesting
3rd Nucleation and Growth Research Conference (NGRC), ( 2023 , 11 )
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Kosuke Nagashio
Device Technology for 2D Layered Semiconductor FETs: Challenge & Perspective
2023 Symposia on VLSI Technology and Circuits, ( 2023 , 6 )
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長汐晃輔
二次元原子層材料デバイスの現状課題と開発展望
2023年電子情報通信学会シリコン材料・デバイス研究会, ( 2023 , 8 )
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長汐晃輔
2次元層状材料トランジスタの発表から約10年
第2回 NanoHubシンポジウム, ( 2023 , 6 )
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長汐晃輔
二次元物質による次世代デバイスの展望
第6回koineミーティング, ( 2023 , 5 )
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長汐晃輔
MoS2トランジスタの発表から約10年 ー現状と将来展望ー
研究会「一次元二次元物質科学の展望と課題」, ( 2023 , 3 )
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Kosuke Nagashio
Consider the S vacancy formation in MoS2
A3 Foresight International Symposium 2022, ( 2022 , 12 )
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K. Nagashio
Novel high-k insulator deposition on 2D materials for future electronics
International Conference on Solid State Devices and Materials (SSDM), (September. 29, 2022, Makuhari Mess Chiba)., ( 2022 , 9 )
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K. Nagashio
Ultrafast Memory Operation in 2D Heterostructured Non-Volatile Memory Device
The 22nd Int. Conf. on Sci & Appl. of Nanotubes and Low-dimensional Materials (NT22), ( 2022 , 6 )
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K. Nagashio
50 Ns Ultrafast Memory Operation in 2D Heterostructured Non-Volatile Memory Device
241st ECS Meeting, (June, 3, 2022, online)., ( 2022 , 6 )
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長汐晃輔
2次元層状物質のデバイス応用の現状と将来展望
化学工学会エレクトロニクス部会 先端技術シンポジウム, ( 2021 , 12 )
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K. Nagashio
Two-dimensional tunnel FET
International Conference on Materials and Systems for Sustainability (ICMaSS), ( 2021 , 11 )
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K. Nagashio
Room temperature in-plane ferroelectricity in SnS
International Microprocesses and Nanotechnology Conference (MNC2021), ( 2021 , 10 )
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長汐晃輔
グラフェン&2Dデバイスの現状と将来展望
システムデバイスロードマップ委員会，2021年度第5回BC, MtM合同委員会 , ( 2022 , 1 )
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長汐晃輔
2次元層状物質の新機能デバイスへの展開
電子デバイス界面テクノロジー研究会，第27回研究会, ( 2022 , 1 )
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長汐晃輔
MoS2 FETから10年：何が解決して何が未解決なのか？
第69回応用物理学会春季学術講演会, ( 2022 , 3 )