研究成果

謝辞の記載についてAcknowledgement remarks

雑誌論文Papers

1. K. Nakayama, S. Toida, T. Endo, M. Inada, S. Sato, H. Tani, K. Watanabe, T. Taniguchi, K. Ueno, Y. Miyata, K. Matsuda, M. Yamamoto
   Spatial and reconfigurable control of photoluminescence from single-layer MoS₂ using a strained VO₂-based Fabry–Pérot cavity
   Appl. Phys. Lett. , 125 , 223106 (2024)
   DOI: 10.1063/5.0236517
                        
2. M.-P. Lee, C. Gao, M.-Y. Tsai, C.-Y. Lin, F.-S. Yang, H.-Y. Sung, C. Zhang, W. Li, J. Li, J. Zhang, K. Watanabe, T. Taniguchi, K. Ueno, K. Tsukagoshi, C.-H. Ho, J. Chu, P.-W. Chiu, M. Li, W.-W. Wu, Y.-F. Lin
   Silicon-van der Waals heterointegration for CMOS-compatible logic-in-memory design
   Sci. Adv. , 9 , 49 (2023)
   DOI: 10.1126/sciadv.adk1597
          
3. T. Fukui, T. Nishimura, Y. Miyata, K. Ueno, T. Taniguchi, K. Watanabe, K. Nagashio
   Single-gate MoS₂ Tunnel FET with a Thickness-Modulated Homojunction
   ACS Appl. Mater. Interfaces , ACS Appl. Mater.Interfaces , 8993-9001 (2024)
   DOI: 10.1021/acsami.3c15535
                  
4. R. Nakajima, T. Nishimura, K. Ueno, K. Nagashio
   Work function modulation of Bi/Au bilayer system toward p-type WSe₂ FET
   ACS Appl. Electron. Mater. , 6 , 144-149 (2023)
   DOI: 10.1021/acsaelm.3c01091
          
5. R. Kato, H. Uchiyama, T. Nishimura, K. Ueno, T. Taniguchi, K. Watanabe, E. Chen, K. Nagashio
   p-type conversion of WS₂ and WS₂ by position-selective oxidation doping and its application in top gate transistors
   ACS Appl. Mater. Interfaces , 15 , 26977-26984 (2023)
   DOI: 10.1021/acsami.3c04052
              
6. J. Choi, J. Embley, D. D. Blach, R. Perea-Causín, D. Erkensten, D. S. Kim, L. Yuan, W. Y. Yoon, T. Taniguchi, K. Watanabe, K. Ueno, E. Tutuc, S. Brem, E. Malic, X. Li, L. Huang
   Fermi Pressure and Coulomb Repulsion Driven Rapid Hot Plasma Expansion in a van der Waals Heterostructure
   Nano Lett. , 23 , 4399-4405 (2023)
   DOI: 10.1021/acs.nanolett.3c00678
          
7. H. Ogura, S. Kawasaki, Z. Liu, T. Endo, M. Maruyama, Y. Gao, Y. Nakanishi, H. E. Lim, K. Yanagi, T. Irisawa, K. Ueno, S. Okada, K. Nagashio, Y. Miyata
   Multilayer In-Plane Heterostructures Based on Transition Metal Dichalcogenides for Advanced Electronics
   ACS Nano , 17,7 , 6545-6554 (2023)
   DOI: 10.1021/acsnano.2c11927
                      
8. T. Sasaki, K. Ueno, T. Taniguchi, K. Watanabe, T. Nishimura, K. Nagashio
   Ultrafast Operation of 2D Heterostructured Nonvolatile Memory Devices Provided by the Strong Short-Time Dielectric Breakdown Strength of h-BN
   ACS Appl. Mater. Interfaces. , 14, 22 , 25659–25669 (2022)
   DOI: 10.1021/acsami.2c03198
            
9. W. Nishiyama, T. Nishimura, M. Nishioka, K. Ueno, S. Iwamoto, K. Nagashio
   Is the Band Gap of Bulk PdSe₂ Located Truly in the Far Infrared Region? -Determination by Fourier Transform Photocurrent Spectroscopy
   Adv. Photonics Res. , 2022 , 2200231 (2022)
   DOI: 10.1002/adpr.202200231
          

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