学術変革領域研究 2.5次元物質科学


学術変革領域研究 2.5次元物質科学

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  • 2026-01-09
    In situ TEM study of MoS₂ conductance modulated by indirect electron beam gate
  • 2026-01-09
    Phase Engineering of 1T′-MoS₂ via Organic Enwrapment
  • 2026-01-09
    Reliability Challenges in Equivalent-Oxide-Thickness Scaling with High-κ Er₂O₃ Dielectrics on Two-Dimensional MoS₂ Field-Effect Transistors
  • 2026-01-09
    Heavily Doped Monolayer MoS₂ by Sub-nm Thick Assembly of Dopant Molecules
  • 2025-12-12
    Towards the Development of Wafer-Scale Integration Using 2D Materials
  • 2025-12-12
    Control of Ferroelectric Domains and Their Impact on the Bulk Photovoltaic Effect in SnS
  • 2025-12-12
    Layered 2D Insulators: from electrical reliability to current injection
  • 2025-12-12
    二次元材料のウエハースケール集積の現状と展望
  • 2025-12-12
    二次元材料のウエハースケール集積の現状と展望”
  • 2025-12-12
    2次元材料のウエハスケール集積回路技術の基盤構築に向けて
  • 2025-12-12
    2次元材料のウエハスケール集積回路技術の基盤構築に向けて
  • 2025-12-12
    次元材料の電子デバイス応用
  • 2025-12-12
    2次元材料のウエハスケール集積回路技術の基盤構築に向けて
  • 2025-12-12
    二次元材料のウエハースケール集積の現状と展望
  • 2025-12-08
    Predicting Dopant Ionization Energy in Substitutionally Doped 2D-TMDC: Impact of Dimensionality and Environmental Dielectric Effects
  • 2025-12-08
    次元性と環境の誘電率を考慮した置換ドープWSe2におけるドーパントのイオン化エネルギーの定量的考察
  • 2025-03-10
    2次元材料のウエハスケール集積回路技術の基盤構築に向けて
  • 2025-03-10
    Shift current photovoltaics in single domain ferroelectric SnS
  • 2025-03-10
    2D layered semiconductor FETs for future electronics
  • 2025-03-10
    2D layered semiconductor FETs for future electronics
  • 2025-03-10
    2D layered semiconductor FETs : Challenge & Perspective
  • 2025-03-10
    2D layered semiconductor FETs: P type operation & large-scale device characterization
  • 2025-03-10
    2D layered semiconductor FETs : Challenge & Perspective
  • 2025-03-10
    2D layered semiconductor FETs: P type operation & large-scale device characterization
  • 2025-02-07
    ショットキー接合と明確に分離されたBPVEによるSnSの90°回転強誘電ドメインの確認
  • 2024-07-17
    loT利用を目指した2次元層状環境発電素子
  • 2024-07-16
    Transport properties of multilayer NbxMo₁−xS₂/MoS₂ in-plane heterostructure tunnel FETs on hexagonal boron nitride substrate
  • 2024-07-16
    2次元層状強誘電SnSにおけるバルク光起電力効果
  • 2024-07-16
    Bulk Photovoltaic Effect in Single Ferroelectric Domain of SnS Crystal and Control of Local Polarization by Strain
  • 2024-07-16
    Giant Second-order Nonlinearity and Anisotropy of Large-sized Few-layer SnS with Ferroelectric Stacking