-
2022-10-24
Novel high-k insulator deposition on 2D materials for future electronics
-
2022-10-24
Ultrafast Memory Operation in 2D Heterostructured Non-Volatile Memory Device
-
2022-10-24
50 Ns Ultrafast Memory Operation in 2D Heterostructured Non-Volatile Memory Device
-
2022-10-24
Quantization of Mode Shifts in Nanocavities Integrated with Atomically Thin Sheets
-
2022-10-24
Ultrafast Operation of 2D Heterostructured Nonvolatile Memory Devices Provided by the Strong Short-Time Dielectric Breakdown Strength of h-BN
-
2022-10-20
Is the Band Gap of Bulk PdSe2 Located Truly in the Far Infrared Region? -Determination by Fourier Transform Photocurrent Spectroscopy
-
2022-06-01
2次元層状物質のデバイス応用の現状と将来展望
-
2022-06-01
Two-dimensional tunnel FET
-
2022-06-01
Room temperature in-plane ferroelectricity in SnS
-
2022-06-01
グラフェン&2Dデバイスの現状と将来展望
-
2022-06-01
2次元層状物質の新機能デバイスへの展開
-
2022-06-01
MoS2 FETから10年:何が解決して何が未解決なのか?
-
2022-06-01
Performance enhancement of SnS/h-BN Heterostructure p-type FET via Thermodynamically Predicted Surface Oxide Conversion Method
-
2022-06-01
Quantitative Determination of Contradictory Band Gap Values of Bulk PdSe2 from Electrical Transport Properties
-
2022-06-01
Identification of the position of piezoelectric polarization at the MoS2/metal interface