学術変革領域研究 2.5次元物質科学


menu

一覧

  • 2022-10-24
    Novel high-k insulator deposition on 2D materials for future electronics
  • 2022-10-24
    Ultrafast Memory Operation in 2D Heterostructured Non-Volatile Memory Device
  • 2022-10-24
    50 Ns Ultrafast Memory Operation in 2D Heterostructured Non-Volatile Memory Device
  • 2022-10-24
    Quantization of Mode Shifts in Nanocavities Integrated with Atomically Thin Sheets
  • 2022-10-24
    Ultrafast Operation of 2D Heterostructured Nonvolatile Memory Devices Provided by the Strong Short-Time Dielectric Breakdown Strength of h-BN
  • 2022-10-20
    Is the Band Gap of Bulk PdSe2 Located Truly in the Far Infrared Region? -Determination by Fourier Transform Photocurrent Spectroscopy
  • 2022-06-01
    2次元層状物質のデバイス応用の現状と将来展望
  • 2022-06-01
    Two-dimensional tunnel FET
  • 2022-06-01
    Room temperature in-plane ferroelectricity in SnS
  • 2022-06-01
    グラフェン&2Dデバイスの現状と将来展望
  • 2022-06-01
    2次元層状物質の新機能デバイスへの展開
  • 2022-06-01
    MoS2 FETから10年:何が解決して何が未解決なのか?
  • 2022-06-01
    Performance enhancement of SnS/h-BN Heterostructure p-type FET via Thermodynamically Predicted Surface Oxide Conversion Method
  • 2022-06-01
    Quantitative Determination of Contradictory Band Gap Values of Bulk PdSe2 from Electrical Transport Properties
  • 2022-06-01
    Identification of the position of piezoelectric polarization at the MoS2/metal interface