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2023-04-05
一次元二次元物質科学の展望と課題
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2023-04-05
“Consider the S vacancy formation in MoS2”
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2023-04-05
"Wavelength Dependence of Polarization-resolved Second Harmonic Generation from Ferroelectric SnS Few Layers"
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2023-04-05
Experimental verification of SO2 and S desorption contributing to defect formation in MoS2 by thermal desorption spectroscopy
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2023-04-05
"A Monolayer MoS2 FET with an EOT of 1.1 nm Achieved by the Direct Formation of a High-κ Er2O3 Insulator Through Thermal Evaporation",
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2022-10-24
Novel high-k insulator deposition on 2D materials for future electronics
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2022-10-24
Ultrafast Memory Operation in 2D Heterostructured Non-Volatile Memory Device
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2022-10-24
50 Ns Ultrafast Memory Operation in 2D Heterostructured Non-Volatile Memory Device
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2022-10-24
Quantization of Mode Shifts in Nanocavities Integrated with Atomically Thin Sheets
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2022-10-24
Ultrafast Operation of 2D Heterostructured Nonvolatile Memory Devices Provided by the Strong Short-Time Dielectric Breakdown Strength of h-BN
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2022-10-20
Is the Band Gap of Bulk PdSe2 Located Truly in the Far Infrared Region? -Determination by Fourier Transform Photocurrent Spectroscopy
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2022-06-01
2次元層状物質のデバイス応用の現状と将来展望
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2022-06-01
Two-dimensional tunnel FET
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2022-06-01
Room temperature in-plane ferroelectricity in SnS
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2022-06-01
グラフェン&2Dデバイスの現状と将来展望
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2022-06-01
2次元層状物質の新機能デバイスへの展開
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2022-06-01
MoS2 FETから10年：何が解決して何が未解決なのか？
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2022-06-01
Performance enhancement of SnS/h-BN Heterostructure p-type FET via Thermodynamically Predicted Surface Oxide Conversion Method
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2022-06-01
Quantitative Determination of Contradictory Band Gap Values of Bulk PdSe2 from Electrical Transport Properties
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2022-06-01
Identification of the position of piezoelectric polarization at the MoS2/metal interface
