一覧

• 2024-07-17
  受賞
  loT利用を目指した2次元層状環境発電素子
• 2024-07-16
  原著論文
  Transport properties of multilayer NbxMo₁−xS₂/MoS₂ in-plane heterostructure tunnel FETs on hexagonal boron nitride substrate
• 2024-07-16
  講演
  2次元層状強誘電SnSにおけるバルク光起電力効果
• 2024-07-16
  原著論文
  Bulk Photovoltaic Effect in Single Ferroelectric Domain of SnS Crystal and Control of Local Polarization by Strain
• 2024-07-16
  原著論文
  Giant Second-order Nonlinearity and Anisotropy of Large-sized Few-layer SnS with Ferroelectric Stacking
• 2024-07-16
  原著論文
  Room-temperature quantum emission from interface excitons in mixed-dimensional heterostructures
• 2024-07-09
  講演
  Device Technology for 2D Layered Semiconductor FETs: Challenge & Perspective ”
• 2024-07-09
  講演
  2次元層状材料トランジスタの発表から約10年 ー課題と将来展望ー
• 2024-07-09
  講演
  Shift current photovoltaics in ferroelectric SnS
• 2024-02-27
  原著論文
  Resonant exciton transfer in mixed-dimensional heterostructures for overcoming dimensional restrictions in optical processes
• 2024-02-27
  原著論文
  Shift current photovoltaics based on a non-centrosymmetric phase in in-plane ferroelectric SnS
• 2024-02-27
  原著論文
  From h-BN to graphene: characterizations of hybrid carbon-doped h-BN for applications in electronic and optoelectronic devices
• 2024-02-27
  書籍
  固体物理
• 2024-02-27
  講演
  Shift current photovoltaics in ferroelectric SnS
• 2024-02-27
  講演
  2D layered semiconductors: Challenge & Perspective
• 2024-02-27
  講演
  Inversion Symmetry Broken Bulk SnS Formed by Step-edge-induced Spiral Growth for Energy Harvesting
• 2024-02-27
  講演
  Device Technology for 2D Layered Semiconductor FETs: Challenge & Perspective
• 2024-02-27
  講演
  二次元原子層材料デバイスの現状課題と開発展望
• 2024-02-27
  講演
  2次元層状材料トランジスタの発表から約10年
• 2024-02-27
  講演
  二次元物質による次世代デバイスの展望
• 2023-04-05
  講演
  MoS2トランジスタの発表から約10年 ー現状と将来展望ー
• 2023-04-05
  講演
  “Consider the S vacancy formation in MoS2”
• 2023-04-05
  原著論文
  "Wavelength Dependence of Polarization-resolved Second Harmonic Generation from Ferroelectric SnS Few Layers"
• 2023-04-05
  原著論文
  Experimental verification of SO₂ and S desorption contributing to defect formation in MoS₂ by thermal desorption spectroscopy
• 2023-04-05
  原著論文
  "A Monolayer MoS2 FET with an EOT of 1.1 nm Achieved by the Direct Formation of a High-κ Er2O3 Insulator Through Thermal Evaporation",
• 2022-10-24
  講演
  Novel high-k insulator deposition on 2D materials for future electronics
• 2022-10-24
  講演
  Ultrafast Memory Operation in 2D Heterostructured Non-Volatile Memory Device
• 2022-10-24
  講演
  50 Ns Ultrafast Memory Operation in 2D Heterostructured Non-Volatile Memory Device
• 2022-10-24
  原著論文
  Quantization of Mode Shifts in Nanocavities Integrated with Atomically Thin Sheets
• 2022-10-24
  原著論文
  Ultrafast Operation of 2D Heterostructured Nonvolatile Memory Devices Provided by the Strong Short-Time Dielectric Breakdown Strength of h-BN